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Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences >
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http://dspace.vgtu.lt/handle/1/1928
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| Title: | Fabrication and study of the organic-inorganic semiconductor diodes formed on n-Si |
| Authors: | Vengalis, Bonifacas
Šliužienė, Kristina
Lisauskas, Vaclovas
Grigaliūnaitė-Vonsevičienė, Gražina
Butkutė, Ramunė
Lygaitis, Ramūnas
Gražulevičius, Juozas Vidas |
| Issue Date: | 2011 |
| Publisher: | Polish Academy of Sciences |
| Citation: | Vengalis, B.; Šliužienė, K.; Lisauskas, V.; Grigaliūnaitė-Vonsevičienė, G.; Butkutė, R.; Lygaitis, R.; Gražulevičius, J.V. 2011. Fabrication and study of the organic-inorganic semiconductor diodes formed on n-Si, Acta Physica Polonica A. 14th International Symposium on Ultrafast Phenomena in Semiconductors. Vilnius, Lithuania, August 23-25, 2010 Warszawa : Polish Academy of Sciences..119(2): 262-264 |
| Series/Report no.: | 119;2 |
| Abstract: | We report fabrication and electrical characterization of the organic-inorganic semiconductor diode structures formed by evaporating thin films of three novel low molecular mass organic compounds on n-type Si substrates. The organic compounds containing carbazole and triphenylamine structural units, namely: 9,9'-bis(4-butylphenyl)-3,3'-bicarbazolyl (BPBC), 4-(1H-perimidin-2-yl)-N,N-diphenylbenzenamine (PER) and 9,9'-diethyl-3,3'-bicarbazolyl (EBC) have been synthesized. The current-voltage characteristics of the Au/(BPBC, EBC, PER)/n-Si diode structures measured at T = 295 K revealed rectifying behavior with a potential barrier height values of 0.71 eV, 0.73 eV, 0.76 eV, respectively. |
| URI: | http://dspace.vgtu.lt/handle/1/1928 |
| ISSN: | 0587-4246 |
| Appears in Collections: | Moksliniai straipsniai / Research articles
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