VGTU talpykla > Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences > Moksliniai straipsniai / Research articles >

Lietuvių   English
Please use this identifier to cite or link to this item:

Title: Fabrication and study of the organic-inorganic semiconductor diodes formed on n-Si
Authors: Vengalis, Bonifacas
Šliužienė, Kristina
Lisauskas, Vaclovas
Grigaliūnaitė-Vonsevičienė, Gražina
Butkutė, Ramunė
Lygaitis, Ramūnas
Gražulevičius, Juozas Vidas
Issue Date: 2011
Publisher: Polish Academy of Sciences
Citation: Vengalis, B.; Šliužienė, K.; Lisauskas, V.; Grigaliūnaitė-Vonsevičienė, G.; Butkutė, R.; Lygaitis, R.; Gražulevičius, J.V. 2011. Fabrication and study of the organic-inorganic semiconductor diodes formed on n-Si, Acta Physica Polonica A. 14th International Symposium on Ultrafast Phenomena in Semiconductors. Vilnius, Lithuania, August 23-25, 2010 Warszawa : Polish Academy of Sciences..119(2): 262-264
Series/Report no.: 119;2
Abstract: We report fabrication and electrical characterization of the organic-inorganic semiconductor diode structures formed by evaporating thin films of three novel low molecular mass organic compounds on n-type Si substrates. The organic compounds containing carbazole and triphenylamine structural units, namely: 9,9'-bis(4-butylphenyl)-3,3'-bicarbazolyl (BPBC), 4-(1H-perimidin-2-yl)-N,N-diphenylbenzenamine (PER) and 9,9'-diethyl-3,3'-bicarbazolyl (EBC) have been synthesized. The current-voltage characteristics of the Au/(BPBC, EBC, PER)/n-Si diode structures measured at T = 295 K revealed rectifying behavior with a potential barrier height values of 0.71 eV, 0.73 eV, 0.76 eV, respectively.
ISSN: 0587-4246
Appears in Collections:Moksliniai straipsniai / Research articles

Files in This Item:

File Description SizeFormat
acpa_Vol119_No2_262-264_Vengalis.pdf597.39 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback