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Title: Low-temperature performance of semiconducting asymmetric nanochannel diodes
Authors: Akbas, Yunus
Plecenik, Tomas
Ďurina, Pavol
Plecenik, Andrej
Jukna, Artūras
Wicks, Gary
Sobolewski, Roman
Keywords: Asymmetric nano-channel diode
Self-switching diode
Ultra-high responsivity
Single-photon detection
2-dimensional electron gas heterostructure
Issue Date: 2017
Publisher: IOP Publishing
Citation: Akbas, Y.; Savich, G. R.; Jukna, A.; Plecenik, T.; Ďurina, P.; Plecenik, A.; Wicks, G. W.; Sobolewski, R. 2017. Low-temperature performance of semiconducting asymmetric nanochannel diodes, Journal of Physics: Conference Series 906, 1–4
Series/Report no.: 906;
Abstract: We present our studies on fabrication and electrical and optical characterization of semiconducting asymmetric nanochannel diodes (ANCDs), focusing mainly on the temperature dependence of their current–voltage (I–V) characteristics in the range from room temperature to 77 K. These measurements enable us to elucidate the electron transport mechanism in a nanochannel. Our test devices were fabricated in a GaAs/AlGaAs heterostructure with a twodimensional electron gas layer and were patterned using electron-beam lithography. The 250-nmwide, 70-nm-deep trenches that define the nanochannel were ion-beam etched using the photoresist as a mask, so the resulting nanostructure consisted of approximately ten ANCDs connected in parallel with 2-μm-long, 230-nm-wide nanochannels. The ANCD I–V curves collected in the dark exhibited nonlinear, diode-type behavior at all tested temperatures. Their forward-biased regions were fitted to the classical diode equation with a thermionic barrier, with the ideality factor n and the saturation current as fitting parameters. We have obtained very good fits, but with n as large as ~50, suggesting that there must be a substantial voltage drop likely at the contact pads. The thermionic energy barrier was determined to be 56 meV at high temperatures. We have also observed that under optical illumination our ANCDs at low temperatures exhibited, at low illumination powers, a very strong photoresponse enhancement that exceeded that at room temperature. At 78 K, the responsivity was of the order of 104 A/W at the nW-level light excitation.
URI: http://dspace.vgtu.lt/handle/1/3600
ISSN: 1742-6588
Appears in Collections:Moksliniai straipsniai / Research articles

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