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Title: | 0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination |
Authors: | Vasjanov, Aleksandr Barzdėnas, Vaidotas |
Keywords: | 5G distributed power amplifier RF traveling-wave TWA wireless |
Issue Date: | 2020 |
Publisher: | MDPI |
Citation: | Vasjanov, A.; Barzdenas, V. 0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination. Electronics 2020, 9, 133. |
Series/Report no.: | 9;1 |
Abstract: | Broadband amplifiers are essential building blocks used in high data rate wireless, radar, and instrumentation systems, as well as in optical communication systems. Only a traveling-wave amplifier (TWA) provides sufficient bandwidth for broadband applications without reducing modern linearization techniques. TWA requires gate-line and drain-line termination, which can be implemented on- and off-chip. This article compares the performance of identical 0.13 μm CMOS TWAs, differing only in gate-line termination placement. Measurement results revealed that the designed TWAs with on- and off-chip termination have a bandwidth of 10 GHz with a maximum gain of 15 dB and a power-added efficiency (PAE) of 5%–22% in the whole operating frequency range. Placing the gate-line termination off-chip results in an S21 flatness reduction, compared to the gain of a TWA with on-chip termination. Gain fluctuation over frequency is reduced by 4–8 dB when the termination resistor is placed as an external circuit. |
Description: | This article belongs to the Section Computer Science & Engineering |
URI: | http://dspace.vgtu.lt/handle/1/3999 |
ISSN: | 2079-9292 |
Appears in Collections: | Moksliniai straipsniai / Research articles
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