VGTU talpykla > Elektronikos fakultetas / Faculty of Electronics > Moksliniai straipsniai / Research articles >

Lietuvių   English
Please use this identifier to cite or link to this item: http://dspace.vgtu.lt/handle/1/4129

Title: Gated Bow-Tie Diode for Microwave to Sub-Terahertz Detection
Authors: Ašmontas, Steponas
Anbinderis, Maksimas
Čerškus, Aurimas
Gradauskas, Jonas
Sužiedėlis, Algirdas
Šilėnas, Aldis
Širmulis, Edmundas
Umansky, Vladimir
Keywords: voltage sensitivity
bow-tie diode
thermoelectric electromotive force
hot carriers
selectively doped semiconductor structure
field-effect transistor
microwave
terahertz frequency
Issue Date: 2020
Publisher: MDPI
Citation: Ašmontas, S.; Anbinderis, M.; Čerškus, A.; Gradauskas, J.; Sužiedėlis, A.; Šilėnas, A.; Širmulis, E.; Umansky, V. Gated Bow-Tie Diode for Microwave to Sub-Terahertz Detection. Sensors 2020, 20, 829.
Series/Report no.: 20;3
Abstract: We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above different regions of the two-dimensional electron channel. The gate influences the sensing properties of the bow-tie diode depending on the nature of voltage detected across the ungated one as well as on the location of the gate in regard to the diode contacts. When the gate is located by the wide contact, the voltage sensitivity increases ten times as compared to the case of the ungated diode, and the detected voltage holds the same polarity of the thermoelectric electromotive force of hot electrons in an asymmetrically shaped n-n+ junction. Another remarkable effect of the gate placed by the wide contact is weak dependence of the detected voltage on frequency which makes such a microwave diode to be a proper candidate for the detection of electromagnetic radiation in the microwave and sub-terahertz frequency range. When the gate is situated beside the narrow contact, the two orders of sensitivity magnitude increase are valid in the microwaves but the voltage sensitivity is strongly frequency-dependent for higher frequencies.
Description: This article belongs to the Special Issue Sensors Based on RF Circuits and Microwave Circuits
URI: http://dspace.vgtu.lt/handle/1/4129
ISSN: 1424-8220
Appears in Collections:Moksliniai straipsniai / Research articles

Files in This Item:

File Description SizeFormat
Gated Bow-Tie Diode for Microwave to Sub-Terahertz Detection.pdf2.23 MBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback