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Title: Two-Color Infrared Sensor on the PbTe: In p-n Junction
Authors: Gradauskas, Jonas
Dzundza, Bohdan
Chernyak, Leonid
Dashevsky, Zinovy
Keywords: infrared sensor
high-temperature PbTe photodiode
specific detectivity
two-photon absorption
Issue Date: 2021
Publisher: MDPI
Citation: Gradauskas, J.; Dzundza, B.; Chernyak, L.; Dashevsky, Z. Two-Color Infrared Sensor on the PbTe: In p-n Junction. Sensors 2021, 21, 1195.
Series/Report no.: 21;4
Abstract: A lead telluride sensor was fabricated on the base of a p-n PbTe junction created on a PbTe single crystal grown by the Czochralski technique, followed by the diffusion of an indium donor impurity into a crystal. The capacitance-voltage and current-voltage characteristics of the sensor were measured over the temperature range from 80 K to 150 K. A prototype of a high-temperature mid-IR sensor, a PbTe diode, with a cut-off wavelength of 4 μm, operating at temperatures up to 150 K, was demonstrated for the first time. The advantage of the sensor is that its operating temperature is high enough to be reached by a solid-state thermoelectric cooler. The sensor showed a specific detectivity value of 1010 cm Hz1/2/W at a temperature of 150 K and a wavelength of 4.2 μm. The possibility to sense pulses of long-IR radiation by means of the PbTe diode was also demonstrated over the 100–180 K temperature range. For the first time, a two-photon absorption-caused photovoltaic effect was observed in PbTe at a wavelength of 9.5 μm at 150 K.
Description: This article belongs to the Section Optical Sensors
ISSN: 1424-8220
Appears in Collections:Moksliniai straipsniai / Research articles

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