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Title: | Two-Color Infrared Sensor on the PbTe: In p-n Junction |
Authors: | Gradauskas, Jonas Dzundza, Bohdan Chernyak, Leonid Dashevsky, Zinovy |
Keywords: | infrared sensor high-temperature PbTe photodiode specific detectivity two-photon absorption |
Issue Date: | 2021 |
Publisher: | MDPI |
Citation: | Gradauskas, J.; Dzundza, B.; Chernyak, L.; Dashevsky, Z. Two-Color Infrared Sensor on the PbTe: In p-n Junction. Sensors 2021, 21, 1195. https://doi.org/10.3390/s21041195 |
Series/Report no.: | 21;4 |
Abstract: | A lead telluride sensor was fabricated on the base of a p-n PbTe junction created on a PbTe single crystal grown by the Czochralski technique, followed by the diffusion of an indium donor impurity into a crystal. The capacitance-voltage and current-voltage characteristics of the sensor were measured over the temperature range from 80 K to 150 K. A prototype of a high-temperature mid-IR sensor, a PbTe diode, with a cut-off wavelength of 4 μm, operating at temperatures up to 150 K, was demonstrated for the first time. The advantage of the sensor is that its operating temperature is high enough to be reached by a solid-state thermoelectric cooler. The sensor showed a specific detectivity value of 1010 cm Hz1/2/W at a temperature of 150 K and a wavelength of 4.2 μm. The possibility to sense pulses of long-IR radiation by means of the PbTe diode was also demonstrated over the 100–180 K temperature range. For the first time, a two-photon absorption-caused photovoltaic effect was observed in PbTe at a wavelength of 9.5 μm at 150 K. |
Description: | This article belongs to the Section Optical Sensors |
URI: | http://dspace.vgtu.lt/handle/1/4247 |
ISSN: | 1424-8220 |
Appears in Collections: | Moksliniai straipsniai / Research articles
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