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|Title: ||Investigation of detection properties of planar microwave diodes based on A3B5 semiconductor compounds in millimeter–wavelength range|
|Other Titles: ||Planarinių mikrobangų diodų A3B5 puslaidininkinių junginių pagrindu detekcinių savybių tyrimai milimetrinių bangų ruože|
|Authors: ||Anbinderis, Maksimas|
|Issue Date: ||6-Jan-2023|
|Publisher: ||Vilnius Gediminas Technical University|
|Citation: ||Anbinderis, M. 2023. Investigation of detection properties of planar microwave diodes based on A3B5 semiconductor compounds in millimeter–wavelength range: doctoral dissertation. Vilnius: Vilnius Gediminas Technical University. 188 p.|
|Abstract: ||Successful development of microwave technologies requires electromagnetic detectors capable of sensing high frequency signals at low levels of microwave power. Bulk barrier planar microwave diodes operating based on the major carrier phenomena are promising in high frequency electromagnetic radiation sensing applications.
The dissertation aimed to develop and investigate new original planar microwave diodes with a lower spread of their electrical parameters and capable of detecting an electromagnetic signal in the millimeter wavelength range.
The first chapter reviews the physical properties of microwave diode based detectors with quasi linear and non linear current voltage characteristics and microwave diodes with a two dimensional electron gas channel. Then, the application technologies for microwave detectors and methods for their investigation using appropriate probing systems are discussed. The second chapter covers the aspects of the development of planar semiconductor microwave diodes based on GaAs, AlGaAs, and AlGaAs/GaAs compounds. Next, the methodology for investigation methods of electrical parameters and detection properties of the microwave diodes is presented. The third chapter presents the results of experimental investigations of the electrical parameters and detection properties of planar dual microwave diodes based on a semi insulating or low resistivity GaAs substrate, including current voltage characteristics, detected voltage on power characteristics and dependence of voltage sensitivity on frequency in the millimeter wavelength range. The fourth chapter presents theoretical estimations and experimental investigations of the electrical and detection properties of bow tie type microwave diodes with partial gate above a two dimensional electron gas channel based on a selectively doped GaAs/AlGaAs heterostructure.
The dissertation presents new developed planar microwave diodes, advanced techniques for investigating their properties, and ways for enhancing their detection properties. Five scientific papers were published on the topic of the dissertation: three papers in scientific journals included in the list of Clarivate Analytics Web of Science database with an impact factor, and two papers in conference proceedings included in the Clarivate Analytics Web of Science and Scopus databases. A European patent based on the results of the dissertation has been granted, and twelve reports, including the results of the dissertation, were presented at national and international scientific conferences.|
|Description: ||Doctoral dissertation|
|Appears in Collections:||Technologijos mokslų daktaro disertacijos ir jų santraukos|
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